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The etching of semiconductors and metals by a photonic jet (PJ) generatedwith a shaped optical ber tip is studied. Etched marks with a diameter of 1micron have been realized on silicon, stainless steel and titanium with a 35kHz pulsed laser, emitting 100 ns pulses at 1064 nm. The selection criteria ofthe ber and its tip are discussed. We show that a 100/140 silica ber is a goodcompromise which takes into account the injection, the working distance and theenergy coupled in the higherorder modes. The energy balance is performed on thebasis of the known ablation threshold of the material. Finally, the dependencebetween the etching depth and the number of pulses is studied. Saturation isobserved probably due to a redeposition of the etched material, showing that ahigher pulse energy is required for deeper etchings.

Etching of semiconductors and metals by the photonic jet with shaped optical fiber tips