English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treatedby in-situ ozone post deposition treatment (PDT). The effects of ozone PDT onthe interfacial and electrical properties of Al2O3 and HfO2 gate dielectricfilms on GaSb substrates were investigated carefully. It is found that thedielectric quality and the interfacial properties of the Al2O3 and HfO2 filmsare improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 andHfO2 films on GaSb substrates exhibit improved electrical and interfacialproperties, such as reduced frequency dispersion, gate leakage current, bordertraps and interface traps. Interface trap density is reduced by ~24% for theAl2O3/GaSb stacks and ~27% for the HfO2/GaSb stacks. In-situ ozone PDT isproved to be a promising technique in improving the quality of high-k gatestacks on GaSb substrates.

applied surface science

Effects of ozone post deposition treatment on interfacial and electrical  characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb  substrates