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Low-energy ion beam modification was proposed to create graphene on the topof the insulated diamond-like carbon films. In such low-temperature fabricationprocess the surface of the amorphous carbon could crystallize to graphene as aresult of point defect creation and enhanced diffusion caused by the ionbombardment. In the experiment 130 eV argon ion irradiation was used. After themodification the resistivity of the sample surface drops. Raman spectra of thesamples measured at 633 nm showed partial crystallization and were similar tothe spectra of defected graphene. This result is very encouraging and we hopethat by improving this technology it will be possible to fabricate defect-freegraphene, which can be used in electronics without transfer to other substrates

Crystallization of diamond-like carbon to graphene under low energy ion beam modification