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Chemical vapor deposition (CVD) of two-dimensional (2D) tungstendichalcogenide crystals requires steady flow of tungsten source in the vaporphase. This often requires high temperature and low pressure due to the highsublimation point of tungsten oxide precursors. We demonstrate atmosphericpressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC)using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as thegrowth promoters. We attribute the facilitated growth to the formation ofvolatile tungsten oxyhalide species during growth, which leads to efficientdelivery of the precursor to the growth substrates. The monolayer crystals werefound to be free of unintentional doping with alkali metal and halogen atoms.Good field-effect transistor (FET) performances with high current on/off ratio~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 andelectron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved.

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals