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Distribution of black spot defects and small clusters in 1 MeV kryptonirradiated 3C-SiC has been investigated using advanced scanning transmissionelectron microscopy (STEM) and TEM. We find that two thirds of clusters smallerthan 1 nm identified in STEM are invisible in TEM images. For clusters that arelarger than 1 nm, STEM and TEM results match very well. A cluster dynamicsmodel has been developed for SiC to reveal processes that contribute toevolution of defect clusters and validated against the (S)TEM results.Simulations showed that a model based on established properties of pointdefects (PDs) generation, reaction, clustering, and cluster dissociation, isunable to predict black spot defects distribution consistent with STEMobservations. This failure suggests that additional phenomena not included in asimple point-defect picture may contribute to radiation-induced evolution ofdefect clusters in SiC and using our model we have determined the effects of anumber of these additional phenomena on cluster evolution. Using theseadditional phenomena it is possible to fit parameters within physicallyjustifiable ranges that yield agreement between cluster distributions predictedby simulations and those measured experimentally.

Evolution of small defect clusters in ion-irradiated 3C-SiC: combined cluster dynamics modeling and experimental study