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A detailed study has been carried out on $\gamma^\prime$ (AlAg$_2$)precipitates in Al-Ag and Al-Ag-Cu alloys to reconcile the conflicting reportson chemical ordering and stacking faults in this phase. High angle annular darkfield scanning transmission electron microscopy and convergent beam electrondiffraction show no indication of chemical ordering on alternate basal planesof $\gamma^\prime$ precipitates in alloys aged at 473 K for 2-23 h.Precipitates were visible as Ag-rich regions with 1-13 fcc$\rightarrow$hcpstacking faults, corresponding to $\gamma^\prime$ platelets with thicknessesranging from 0.69-6.44 nm. There were no systematically absent thicknesses.Growth ledges with a riser height equal to the $c$-lattice parameter (0.46 nm)were directly observed for the first time. Genuine stacking faults within theprecipitates were extremely rare and only observed in thicker precipitates. Inprecipitates with 1-3 stacking faults there was also substantial Ag in thesurrounding fcc layers of the matrix, indicating that Ag strongly segregated tothe broad, planar precipitate-matrix interfaces. This segregation isresponsible for previous reports of stacking faults in $\gamma^\prime$precipitates. The results indicate that the early stages of $\gamma^\prime$precipitate growth are interfacially controlled.

On chemical order and interfacial segregation in $\gamma^\prime$ (AlAg$_2$) precipitates