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SCAPS simulation was utilized to complement previously published perovskite-on-Si tandem solar devices and explore herein viable all-perovskite 4-T mechanically stacked and 2-T monolithic non-Pb tandem structures. CsSn 0.5 Ge 0.5 I 3  (1.5 eV) was used as top cell wide bandgap absorber, while CsSnI 3  (1.3 eV) was chosen as bottom cell low bandgap absorber. The top cell was simulated with AM 1.5G 1 Sun spectrum, and the bottom cell was simulated with the filtered spectrum from the top cell. To form a 2-T monolithic tandem device, ITO was used as the recombination layer; the current matching condition was investigated by varying the thickness of the absorber layers. For a current-matched device with a  J sc of 21.2 mA/cm 2 , optimized thicknesses of 450 nm and 815 nm were obtained for the top and bottom absorber layers, respectively. At these thicknesses, the PCEs of the top and bottom cells were 14.08% and 9.25%, respectively, and 18.32% for the final tandem configuration. A much simpler fabricated and simulated 4-T mechanically stacked tandem device, on the other hand, showcased top and bottom cell PCEs of 15.83% and 9.15%, at absorber layer thicknesses of 1300 nm and 900 nm, respectively, and a final overall tandem device PCE of 19.86%.

Investigation of non-Pb all-perovskite 4-T mechanically stacked and 2-T monolithic tandem solar devices utilizing SCAPS simulation