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Understanding broadband photoconductive behaviour in two dimensional layeredmaterials are important in order to utilize them for a variety ofopto-electronic applications. Here we present our results of photocurrentspectroscopy measurements performed on few layer Indium Selenide (InSe) flakes.Temperature (T) dependent (40 K < T < 300 K) photocurrent spectroscopy wasperformed in order to estimate the band-gap energies E_g(T) of InSe at varioustemperatures. Our measurements indicate that room temperature E_g value forInSe flake was ~ 1.254 eV, which increased to a value of ~ 1.275 eV at lowtemperatures. The estimation of Debye temperatures by analysing the observedexperimental variation of E_g as a function of T using several theoreticalmodels is presented and discussed.

Broadband Photocurrent Spectroscopy and Temperature Dependence of Band-gap of Few-Layer Indium Selenide