Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving
Author(s) -
Wei Wang,
Liang Wang,
Gaole Dai,
Wei Deng,
Xiujuan Zhang,
Jiansheng Jie,
Xiaohong Zhang
Publication year - 2017
Publication title -
nano-micro letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.473
H-Index - 52
eISSN - 2311-6706
pISSN - 2150-5551
DOI - 10.1007/s40820-017-0153-5
Subject(s) - materials science , optoelectronics , pentacene , wafer , fabrication , electron mobility , nanotechnology , substrate (aquarium) , diode , single crystal , transistor , thin film transistor , layer (electronics) , crystallography , chemistry , electrical engineering , voltage , pathology , engineering , medicine , alternative medicine , geology , oceanography
Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm 2 V −1 s −1 , demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm 2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm 2 V −1 s −1 (average mobility 1.2 cm 2 V −1 s −1 ) and 3.0 cm 2 V −1 s −1 (average mobility 2.0 cm 2 V −1 s −1 ), respectively. They both have a high on/off ratio ( I on / I off ) > 10 9 . The performance can well satisfy the requirements for light-emitting diodes driving. Graphical AbstractElectronic supplementary material The online version of this article (doi:10.1007/s40820-017-0153-5) contains supplementary material, which is available to authorized users.
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