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Three-layer heterostructures with embedded CrSi2 nanocrystallites were grown using molecular-beam epitaxy. The nanocrystallites have epitaxial orientation to the silicon lattice and are subjected to anisotropic compressive stress in the CrSi2 [001] direction. The thermoelectric power factor of the heterostructure is about 5 times higher than that in the substrate at 300–480 K. Taking into consideration the ratio of nanocomposite and substrate thickness, the real power factor is expected to be 2–3 orders higher than the measured one and it reaches 3200 μW K-2 m-1 at 470 K.Open image in new window

Formation and thermoelectric properties of Si/CrSi2/Si(001) heterostructures with stressed chromium disilicide nanocrystallites