English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We report here the effect of a controlled modification of the shell microstructure around the crystalline core of a silicon nanowire (SiNW) grown at a low (320 degrees C) temperature by the hot wire chemical vapor processing (HWCVP) method. We demonstrate these effects through the evaluation of the performance of a micro-supercapacitor (mu-SC) device fabricated with these SiNWshaving different shell structures. It is to be emphasized that the shell microstructure could be modified through a controlled interplay of the process parameters during the growth. A careful optimization of the shell microstructure in these nanowires during its low-temperature deposition has led to a mu-SC with capacitance value of 94 mu F/cm(2). This result opens up exciting opportunities for HWCVP-grown SiNWs to be employed for on-chip mu-SC and other low-temperature applications

Controlling the shell microstructure in a low-temperature-grown SiNWs and correlating it to the performance of the SiNWs-based micro-supercapacitor