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There are several growing methods for graphene. In this study, the growth ofgraphene-like clusters on the SiC wafers is done by annealing the wafers in avacuum evaporation system equipped with a heating source accessory. Forevaluating the quality of the growth method, the Raman spectra and infraredintensities of graphene-like clusters are studied theoretically andexperimentally. For doing the theoretical study, three types of grapheneclusters are considered and their Raman spectrum and infrared intensities arefound using the Hartree-Fock method. The results show that the geometry of thecluster, and in consequence the geometry-dependent high (low) non-uniformity ofcharge distribution on the cluster surfaces causes the high (low) infraredintensities. The experimental spectrums are measured and compared with thetheoretical ones. An agreement was seen between the experimental andtheoretical Raman spectrum when the wave number is less than 1700 Cm-1. It isshown that more accurate temperature control and higher vacuum level of thechamber are essential for using the physical evaporation method for growing thesingle-layer graphene on the SiC substrate.

Raman spectra and infrared intensities of graphene-like clusters in compared to epitaxial graphene on Si