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Hydrogenated amorphous silicon is well known for its various alloys and wideranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) isone of them. The effect of boron doping on optoelectronic properties of theaSiO:H have been investigated with intrinsic and delta-doped materials. TheUrbach energy of the tail and midgap defect states of the intrinsic and lightlydoped(0.01% gas phase doping) materials were found to be 103, 151 meV and8.19x1016 , 5.47x1017 cm-3 respectively. As a result of the 0.01% doping areduction in optical gap was observed from 1.99 to 1.967 eV along with a shiftin Fermi level by 0.258eV, indicating an efficient boron doping of theintrinsic silicon oxide material. The lightly doped p-type layer was used tosimulate device characteristics in amorphous silicon (aSi:H) and HIT-type solarcell. In the aSi:H device the power conversion efficiency (PCE) was moderatewhile in a HIT-type device the PCE was 26.4%. It indicated that a good qualitysilicon oxide layer can be an attractive passivation layer for a HIT typedevice. It further indicated that defect density of the passivation layer canhave a significant impact on performance of a HIT type device. The primarydifference of the two passivation layers (intrinsic and delta-doped) are thedifference in mid-gap and tail states. Passivation layer with a higher mid-gapstate leads to poorer device performance. Therefore, it highlights theimportance of using a less defective passivation layer to improve deviceperformance.

silicon

Investigating intrinsic silicon oxide and a lightly doped p-type layer  for evolution of tail states and estimating its impact as a passivation layer  in a HIT type device