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We present a novel two-step approach for the selective area growth (SAG) ofGaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailedexploration of the NW diameter evolution. In the first step, the growthparameters are optimized for the nucleation of vertically-oriented NWs. In thesecond step, the growth parameters are chosen to optimize the NW shape,allowing NWs with a thin diameter (45 nm) and an untapered morphology to berealized. This result is in contrast to the commonly observed thick, inverselytapered shape of SAG NWs. We quantify the flux dependence of radialvapour-solid (VS) growth and build a model that takes into account diffusion onthe NW sidewalls to explain the observed VS growth rates. Combining this modelfor the radial VS growth with an existing model for the droplet dynamics at theNW top, we achieve full understanding of the diameter of NWs over their entirelength and the evolution of the diameter and tapering during growth. Weconclude that only the combination of droplet dynamics and VS growth results inan untapered morphology. This result enables NW shape engineering and hasimportant implications for doping of NWs.

Diameter evolution of selective area grown Ga-assisted GaAs nanowires