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Group-IV monochalcogenides are emerging as a new class of layered materialsbeyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus(BP). In this paper, we report experimental and theoretical investigations ofthe band structure and transport properties of GeSe and its heterostructures.We find that GeSe exhibits a markedly anisotropic electronic transport, withmaximum conductance along the armchair direction. Density functional theorycalculations reveal that the effective mass is 2.7 times larger along thezigzag direction than the armchair direction; this mass anisotropy explains theobserved anisotropic conductance. The crystallographic orientation of GeSe isconfirmed by angleresolved polarized Raman measurements, which are furthersupported by calculated Raman tensors for the orthorhombic structure. NovelGeSe/MoS2 p-n heterojunctions are fabricated, combining the natural p-typedoping in GeSe and n-type doping in MoS2. The temperature dependence of themeasured junction current reveals that GeSe and MoS2 have a type-II bandalignment with a conduction band offset of ~0.234 eV. The anisotropicconductance of GeSe may enable the development of new electronic andoptoelectronic devices, such as high-efficiency thermoelectric devices andplasmonic devices with resonance frequency continuously tunable through lightpolarization direction. The unique GeSe/MoS2 p-n junctions with type-IIalignment may become essential building blocks of vertical tunnelingfield-effect transistors for low-power applications. The novel p-type layeredmaterial GeSe can also be combined with n-type TMDCs to form heterogeneouscomplementary metal oxide semiconductor (CMOS) circuits.

Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions