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We present a lithography-free technique for fabrication of clean, highquality graphene devices. This technique is based on evaporation through hardSi shadow masks, and eliminates contaminants introduced by lithographicalprocesses. We demonstrate that devices fabricated by this technique havesignificantly higher mobility values than those by standard electron beamlithography. To obtain ultra-high mobility devices, we extend this technique tofabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices