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The presented work investigates about the deformation of semiconductor device induced by electrochemical deposited thick copper films. It enhances thermal and electric performances allowing to use copper interconnections without formations of intermetallic layers at the interfaces with consequent reliability improvement. Nevertheless, the induced deformation strongly affects manufacturability, criticizing the integration between different process steps. Experiment based on phase-shift Moiré principle has been performed to better understand the relation between warpage and temperature. Finite element model has been developed to reproduce the phenomenon in order to address the design and the process integration optimizing workability, electrical performances and reliability.

An experimental-numeric approach to manufacture semiconductor wafer using thick copper front metallization