English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the zaia usage as premium feature

ZAIA

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the access of premium content as premium feature

Premium Content

Zendy Tools

Zendy Open

Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 s. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band 	increases by an order of magnitude. This unusual phenomenon can be 	explained on the assumption that the electron-capture coefficient for the 	GL-related defect decreases with temperature as  .

Defect-Related Luminescence in Undoped GaN Grown by HVPE