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Real Si insulated gate bipolar transistors with conventional Ni/Ag metallization and dummy Si chips with thickened Ni/Ag metallization have both been bonded, at 250°C for 0 min, 40 min, and 640 min, to Ag foil electroplated with 2.7 µm and 6.8 µm thick Sn as an interlayer. On the basis of characterization of the microstructure of the resulting joints, suitable thicknesses are suggested for the Ag base metal and the Sn interlayer for Ag/Sn/Ag transient liquid-phase (TLP) joints used for power die attachment. The diffusivities of Ag and Sn in the ξAg phase were also obtained. In combination with the kinetic constants of Ag3Sn growth and diffusivities of Ag and Sn in Ag reported in the literature, the diffusivities of Ag and Sn in the ξAg phase were also used to simulate and predict diffusion-controlled growth and evolution of the phases in Ag/Sn/Ag TLP joints during extended bonding and in service.

Suitable Thicknesses of Base Metal and Interlayer, and Evolution of Phases for Ag/Sn/Ag Transient liquid-phase Joints Used for Power Die Attachment