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We investigate the synthesis of kesterite Cu2ZnSnS4 (CZTS) polycrystallinethin films using cosputtering from binary sulfide targets followed by annealingin sulfur vapor at 500 {\deg}C to 650 {\deg}C. The films are the kesterite CZTSphase as indicated by x-ray diffraction, Raman scattering, and opticalabsorption measurements. The films exhibit (112) fiber texture and preferredlow-angle and Sigma3 grain boundary populations which have been demonstrated toreduce recombination in Cu(In,Ga)Se2 and CdTe films. The grain growth kineticsare investigated as functions of temperature and the addition of Na.Significantly, lateral grain sizes above 1 um are demonstrated for samplesgrown on Na-free glass,demonstrating the feasibility for CZTS growth onsubstrates other than soda lime glass.

journal of electronic materials

Grain Size and Texture of Cu2ZnSnS4 Thin Films Synthesized by  Cosputtering Binary Sulfides and Annealing: Effects of Processing Conditions  and Sodium