English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Low dimensional materials provide the possibility of improved thermoelectricperformance due to the additional length scale degree of freedom forengineering their electronic and thermal properties. As a result of suppressedphonon conduction, large improvements on the thermoelectric figure of merit,ZT, have been recently reported in nanostructures, compared to the rawmaterials' ZT values. In addition, low dimensionality can improve a device'spower factor, offering an additional enhancement in ZT. In this work theatomistic sp3d5s*-spin-orbit-coupled tight-binding model is used to calculatethe electronic structure of silicon nanowires (NWs). The Landauer formalism isapplied to calculate an upper limit for the electrical conductivity, theSeebeck coefficient, and the power factor. We examine n-type and p-typenanowires of diameters from 3nm to 12nm, in [100], [110], and [111] transportorientations at different doping concentrations. Using experimental values forthe lattice thermal conductivity in nanowires, an upper limit for ZT iscomputed. We find that at room temperature, scaling the diameter below 7nm canat most double the power factor and enhance ZT. In some cases, however, scalingdoes not enhance the performance at all. Orientations, geometries, and subbandengineering techniques for optimized designs are discussed.

Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model