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A simple, non-invasive method using Raman spectroscopy for the estimation ofthe thickness of graphene layers grown epitaxially on silicon carbide (SiC) ispresented, enabling simultaneous determination of thickness, grain size anddisorder using the spectra. The attenuation of the substrate Raman signal dueto the graphene overlayer is found to be dependent on the graphene filmthickness deduced from X-ray photoelectron spectroscopy and transmissionelectron microscopy of the surfaces. We explain this dependence using anabsorbing overlayer model. This method can be used for mapping graphenethickness over a region and is capable of estimating thickness of multilayergraphene films beyond that possible by XPS and Auger electron spectroscopy(AES).

Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity