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Weak antilocalization (WAL) effect is commonly observed in 2D systems, or 3Dtopological insulators, topological semimetal systems. Here we report the clearsign of WAL effect in high quality Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystals,in below 50$^\circ$ K region. The chemical vapor transport method was employedto grow the single crystal samples, the high crystallization quality anduniform element distribution are verified by X-ray diffractions and electronmicroscopy techniques. Employing the Hall effect and two-band model fitting,the high carrier mobility (> 1000 cm$^2$V$^{-1}$s$^{-1}$ in 2 to 300$^\circ$ Kregion) and off-compensation electron/hole ratio are obtained. Due to thedifferent angular dependence of WAL effect and the fermiology ofTa$_{0.7}$Nb$_{0.3}$Sb$_2$ single crystal, interesting magnetic-field-inducedsymmetry change is observed in angular magnetoresistance. These interestingtransport properties will lead to more theoretical and applicationalexploration in Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ and related semimetal materials.

The Emerging Weak Antilocalization Effect in Semimetal Ta$_{0.7}$Nb$_{0.3}$Sb$_2$ Single Crystal