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Quantum batteries are energy storage devices that satisfy quantum mechanicalprinciples. How to improve the battery's performance such as stored energy andpower is a crucial element in the quantum battery. Here, we investigate thecharging and discharging dynamics of a three-level counterdiabatic stimulatedRaman adiabatic passage quantum battery via shortcuts to adiabaticity, whichcan compensate for undesired transitions to realize a fast adiabatic evolutionthrough the application of an additional control field to an initialHamiltonian. The scheme can significantly speed up the charging and dischargingprocesses of a three-level quantum battery and obtain more stored energy andhigher power compared with the original stimulated Raman adiabatic passage. Weexplore the effect of both the amplitude and the delay time of driving fieldson the performances of the quantum battery. Possible experimentalimplementation in superconducting circuit and nitrogen-vacancy center is alsodiscussed.

Highly efficient charging and discharging of three-level quantum batteries through shortcuts to adiabaticity