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Looking for new materials with Dirac points has been a fascinating subject ofresearch. Here we report the growth, crystal structure, and band structure ofHfGe0.92Te single crystals, featuring three different types of Dirac points.HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No.129), having square Ge-atom plane with vacancies about 8%. Despite thevacancies on Ge site, the Dirac nodal line composed of conventional Diracpoints vulnerable to spin-orbit coupling (SOC) is observed using angle-resolvedphotoemission spectroscopy, accompanied with the robust Dirac line protected bythe nonsymmorphic symmetry against both SOC and vacancies. Specially,spin-orbit Dirac points (SDPs) originated from the surface formed under SOC arehinted to exist according to our experiments and calculations.Quasi-two-dimensional (quasi-2D) characters are observed and further confirmedby angular-resolved magnetoresistance. HfGe0.92Te is a good candidate toexplore exotic topological phases or topological properties with threedifferent types of Dirac points and a promising candidate to realize 2D SDPs.

Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te