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It is investigated the formation of the phase composition and structure inthe nanoscaled CoSbx (30 nm) films deposited by the method of molecular-beamepitaxy on the substrates of the oxidated monocrystalline silicon at 200 C andfollowing thermal treatment in vacuum in temperature range of 300-700 C. It isestablished that the films after the deposition are polycrystalline withouttexture. With increase in Sb content the formation of the phase composition inthe films takes place in such sequence as this is provided by phase diagram forthe bulky state of the Co-Sb system. At annealing in vacuum at temperatureabove 450-500 C a sublimation not only of the crystalline Sb phase but from theantimonides occurs.

Thermally activated processes of the phase composition and structure formation of the nanoscaled Co-Sb films