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The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and room temperature condition. The response time was calculated at the level of ~ 220–520 ps for zero bias condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ~ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ~ 108 Jones assuming immersion.

Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition