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Thermal decomposition of suitable coordination compounds may be used as efficient route for fabrication of semiconducting layers. A new potential CdS precursor—a cadmium complex with all-sulfur Cd-coordination sphere [Cd{μ-SSi(OBu t )3}(S2CNC4H8)]2 1—has been prepared, and its properties are investigated. The complex was obtained in the reaction between dimeric bis(tri-tert-butoxysilanethiolato)cadmium(II) [Cd{SSi(OBu t )3}2]2 and ammonium N,N-tetrametylene-dithiocarbamate and characterized by spectral methods (IR, UV–Vis, MS, and NMR). X-ray structure analysis revealed the complex as molecular and dimeric in solid state with each of chelating dithiocarbamate ligands bonded to one Cd center and sulfur atoms from two tri-tert-butoxysilanethiolato ligands bridging metallic centers and thus completing the CdS4 coordination sphere. Thin film of the precursor prepared on SiO2 substrates via spin-coating technique was analyzed by AFM. Its decomposition was studied by thermal analysis methods (TG, DSC, and TG-FTIR). After melting at 227 °C, [Cd{μ-SSi(OBu t )3}(S2CNC4H8)]2 undergoes endothermic decomposition leading to CdS as the only solid product further identified by XRD, EDS, FIR as hexagonal CdS form. Its morphology is characteristic and may be described as “micro-noodles”.

Cadmium complex possessing simultaneously silanethiolato- and dithiocarbamato-ligands. A novel single-source precursor of cadmium sulfide