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Ruthenium dioxide (RuO$_2$) thin films were synthesized by Chemical SolutionDeposition (CSD) on silicon substrates using only water and acetic acid assolvents. The microstructure, phase-purity, electrical and optical propertiesas well as the thermal stability of the thin films have been characterized. Themicrostructure of the thin films strongly depends on the annealing temperature:A smooth thin film was achieved at an annealing temperature of 600$^\circ$C.Higher annealing temperatures (800$^\circ$C) led to radial grain growth and aninhomogeneous thin film. A very low resistivity of 0.89 {\Omega}m was measuredfor a 220 nm-thick thin film prepared at 600$^\circ$. The resistivity of thethin films increases with temperature, which indicates metallic behavior.Phase-purity of the thin films was confirmed with X-ray Diffraction (XRD)measurements, X-ray Photoelectron Spectroscopy (XPS) and Raman spectroscopy.Transmission and reflectivity measurements indicate that RuO$_2$ efficientlyblocks the UV-VIS and IR wavelengths. The optical constants determined viaspectroscopic ellipsometry show high absorption in the near-IR region as wellas a lower one in the UV-VIS region. The thermal stability was investigated bypost-annealing, confirming that the thin films are stable up to 750$^\circ$C insynthetic air.

Highly Conductive RuO$_2$ Thin Films from Novel Facile Aqueous Chemical Solution Deposition