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Electro-thermal coupling in semiconductor bolometers is known to createnonlinearities in transient detector response, particularly when such detectorsare biased outside of their ideal regions (i.e. past the turnover point intheir IV curves). This effect is further compounded in the case where a straycapacitance in the bias circuit is present, for example in long cryogeniccabling. We present a physical model of the influence of such electro-thermalcoupling and stray capacitance in a composite NTD germanium bolometer, in whichprevious experimental data at high $V_{\rm bias}$ resulted in oscillations ofthe impulse response of the detector to irradiation by alpha particles. Themodel reproduces the transient oscillations seen in the experimental data,depending both on electro-thermal coupling and stray capacitance. This isintended as an experimental and simulated example of such oscillations,demonstrated for the specific case of this bolometric detector.

Modelling signal oscillations arising from electro-thermal coupling and stray capacitance in semiconducting bolometer impulse response