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The reference design for the next-generation cosmic microwave background(CMB) experiment, CMB-S4, relies on large arrays of transition edge sensor(TES) bolometers coupled to Superconducting Quantum Interference Device(SQUID)-based readout systems. Mapping the CMB to near cosmic variance limitswill enable the search for signatures of inflation and constrain dark energyand neutrino physics. AlMn TESes provide simple film manufacturing and highlyuniform arrays over large areas to meet the requirements of the CMB-S4experiment. TES parameters such as critical temperature and normal resistancemust be tuned to experiment specifications and can be varied based on geometryand steps in the fabrication process such as deposition layering, geometry, andbaking time and temperature. Using four-terminal sensing, we measured $T_C$ and$R_N$ of AlMn 2000 ppm films and devices of varying thicknesses fabricated atArgonne National Laboratory to motivate device geometries and fabricationprocesses to tune $T_C$ to 150-200 mK and $R_N$ to $\sim$10 mOhms. Measurementsof IV curves and time constants for the resulting devices of varying leg lengthwere made using time-division SQUID multiplexing, and determined $T_C$, $G$,$k$, $f_{3db}$, and $R_N$. We present the results of these tests along with thegeometries and fabrication steps used to tune the device parameters to thedesired limits.

Developing AlMn films for Argonne TES fabrication