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We present the noise performance of High Electron Mobility Transistors (HEMT)developed by CNRS-C2N laboratory. Various HEMT's gate geometries with 2 pF to230 pF input capacitance have been studied at 4 K. A model for both voltage andcurrent noises has been developed with frequency dependence up to 1 MHz. TheseHEMTs exhibit low dissipation, excellent noise performance and canadvantageously replace traditional Si-JFETs for the readout of high impedancethermal sensor and semiconductor ionization cryogenic detectors. Our modelpredicts that cryogenic germanium detectors of 30 g with 10 eV heat and 20 eVeebaseline resolution are feasible if read out by HEMT based amplifiers. Suchresolution allows for high discrimination between nuclear and electron recoilsat low threshold. This capability is of major interest for Coherent ElasticNeutrino Scattering and low-mass dark matter experiments such as Ricochet andEDELWEISS.

Low-noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors