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International audienceThermally-stimulated current measurements provide a sensitive tool to char-acterize carrier traps in germanium detectors for dark matter search. Using this technique at cryogenic temperatures, very shallow traps have been detected with binding energies of a fraction of a meV, associated with the dopant species in the D-(A+) charge states. A positive identification of these traps is achieved through an analysis of the field dependence of the carrier emission rates, which demonstrates a potential well for the trapped carriers in the form of a polarization well in r-4, consistent with Lax's model for carrier trapping by a neutral center. The density of these traps is assessed, and implications for the space-charge cancellation procedure in cryogenic Ge detectors are discussed

Thermally-Stimulated Current Investigation of Dopant-Related D − and A + Trap Centers in Germanium for Cryogenic Detector Applications