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A laser multicharged ion source was used to perform interfacial treatment of the 4H-SiC/ SiO2 interface using B and Ba ions. A Q-switched Nd:YAG laser (wavelength λ = 1064 nm, pulse width τ = 7 ns, and fluence F = 135 J/cm2) was used to ablate B and Ba targets to generate multicharged ions. The ions were deflected by an electrostatic field to separate them from the neutrals. The multicharged ions were used for nanometer layer growth and shallow ion implantation in 4H-SiC. Several metal-oxide-semiconductor capacitors (MOSCAP) were fabricated with a combination of B and Ba at the SiC/SiO2 interface. High-low C–V measurements were used to characterize the MOSCAPs. The B interfacial layer reduced the MOSCAP flatband voltage from 4.5 to 0.04 V, while the Ba layer had a negligible effect.

Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source