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An YBCO-based test structure corresponding to the family of ReRAM devicesassociated with the valence change mechanism is presented. We havecharacterized its electrical response previous to its lift-off to a Low EarthOrbit (LEO) using standard electronics and also with the dedicated LabOSat-01controller. Similar results were obtained in both cases. After about 200 daysat LEO on board a small satellite, electrical tests started on the memorydevice using the LabOSat-01 controller. We discuss the results of the first 150tests, performed along a 433-day time interval in space. The memory deviceremained operational despite the hostile conditions that involved launching,lift-off vibrations, permanent thermal cycling and exposure to ionizingradiation, with doses 3 orders of magnitude greater than the usual ones onEarth. The device showed resistive switching and IV characteristics similar tothose measured on Earth, although with changes that follow a smooth drift intime. A detailed study of the electrical transport mechanisms, based onprevious models that indicate the existence of various conducting mechanismsthrough the metal-YBCO interface showed that the observed drift can beassociated with a local temperature drift at the LabOSat controller, with noclear evidence that allows determining changes in the underlying microscopicfactors. These results show the reliability of complex-oxide non-volatileReRAM-based devices in order to operate under all the hostile conditionsencountered in space-borne applications.

YBCO-based non-volatile ReRAM tested in Low Earth Orbit