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It was shown a possibility to use the (GaInEr)S single crystal as optoelectronics detectors of gamma-irradiation using photoinduced nonlinear optical methods and photoluminescence. The crystal was irradiated by a Co source at ambient conditions. The average energy of the incident γ-rays was about 1.25 MeV. The luminescence excitation was carried out using a 150 mW cw laser with wavelength 532 nm. The best results sensitive to the gamma irradiation were obtained for the third harmonic generations (THG) of the materials treated by bicolor Er: glass laser two beams propagated at angles about 21°–24°. The photoinduced gratings profile also were explored and their correlation with the gamma radiation and nonlinear optical response were explored. Comparison of photoluminescence and photoinduced nonlinear optical sensitivity to radiations was performed.

(Ga54.59In44.66Er0.75)2S300 single crystal: novel material for detection of γ-radiation by photoinduced nonlinear optical method