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In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at low temperature without seed substrate

Excimer laser crystallization of InGaZnO4 on SiO2 substrate