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Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazingincidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observedat a low growth rate and substrate temperatures near 200 degrees Celsius. Adamping of x-ray intensity oscillations due to a gradual surface rougheningduring growth is found. The corresponding sequence of coverages of thedifferent terrace levels is obtained. The after-deposition surface recovery isvery slow. Annealing at 310 degrees Celsius combined with the deposition of onemonolayer of Fe3Si restores the surface to high perfection and minimalroughness. Our stoichiometric films possess long-range order and a high qualityheteroepitaxial interface.

In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films