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A new methodology for fundamental studies of radiation effects in solids isherein introduced by using a plasma Focused Ion Beam (PFIB). The classicalexample of ion-induced amorphization of single-crystalline pure Si is used as aproof-of-concept experiment that delineates the advantages and limitations ofthis new technique. We demonstrate both the feasibility and invention of a newion irradiation mode consisting of irradiating a single-specimen in multipleareas, at multiple doses, in specific sites. This present methodology suggestsa very precise control of the ion beam over the specimen, with an error in theflux on the order of only 1%. In addition, the proposed methodology allows theirradiation of specimens with higher dose rates when compared with conventionalion accelerators and implanters. This methodology is expected to open newresearch frontiers beyond the scope of materials at extremes such as innanopatterning and nanodevices fabrication.

A New Methodology for Radiation Effects Studies in Solids using the Plasma Focused Ion Beam