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We report on the observation of terahertz (THz) radiation inducedband-to-band impact ionization in \HgTe quantum well (QW) structures ofcritical thickness, which are characterized by a nearly linear energydispersion. The THz electric field drives the carriers initializingelectron-hole pair generation. The carrier multiplication is observed forphoton energies less than the energy gap under the condition that the productof the radiation angular frequency $\omega$ and momentum relaxation time$\tau_{\text l}$ larger than unity. In this case, the charge carriers acquirehigh energies solely because of collisions in the presence of a high-frequencyelectric field. The developed microscopic theory shows that the probability ofthe light impact ionization is proportional to $\exp(-E_0^2/E^2)$, with theradiation electric field amplitude $E$ and the characteristic field parameter$E_0$. As observed in experiment, it exhibits a strong frequency dependence for$\omega \tau \gg 1$ characterized by the characteristic field $E_0$ linearlyincreasing with the radiation frequency $\omega$.

Impact ionization induced by terahertz radiation in HgTe quantum wells of critical thickness