English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Lacking a band gap largely limits the application of graphene in electronicdevices. Previous study shows that grain boundaries (GBs) in polycrystallinegraphene can dramatically alter the electrical properties of graphene. Here, weinvestigate the band structure of polycrystalline graphene tuned by externallyimposed strains and intrinsic mismatch strains at the GB by density functionaltheory (DFT) calculations. We found that graphene with symmetrical GBstypically has zero band gap even with large uniaxial and biaxial strain.However, some particular asymmetrical GBs can open a band gap in graphene andtheir band structures can be substantially tuned by external strains. A maximumband gap about 0.19 eV was observed in matched-armchair GB (5, 5) | (3, 7) witha misorientation of {\theta}=13o when the applied uniaxial strain increases to9%. Although mismatch strain is inevitable in asymmetrical GBs, it has a smallinfluence on the band gap of polycrystalline graphene.

Tunable Band Structures of Polycrystalline Graphene by External and Mismatch Strains