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Graphene nano-electro-mechanical switches are promising components due totheir excellent switching performance such as low pull-in voltage and lowcontact resistance. Mass fabrication with an appropriate counter electroderemains challenging. In this work, we report the stacking of nanocrystallinegraphene (NCG) with a 70-nm dielectric separation layer. The buried NCG layeris contacted through the formation of vias and acts as actuation electrode.After metallization, the top 7.5-nm thin NCG layer is patterned to formdouble-clamped beams, and the structure is released by hydrofluoric acidetching. By applying a voltage between the top and buried NCG layer, astep-like current increase is observed below 1.5 V, caused by the contact ofthe movable beam with the buried NCG. No pull-out is observed due to the thinsacrificial layer and high beam length, resulting in low mechanical restoringforce. We discuss the possible applications of the NCG stacking approach torealize Nano-Electro-Mechanical (NEM) contact switches and advanced logicalcomponents such as a AND logic.

Stacking of nanocrystalline graphene for Nano-Electro-Mechanical (NEM) actuator applications