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Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coatedon glass substrates has been measured using Z-scans with 200-fs laser pulses atwavelengths ranging from 720 to 780 nm. The magnitudes of the measurednonlinearity in the ITO films were found to be dependent on the carrierconcentration with a maximum n2-value of 4.1 x 10-5 cm2/GW at 720-nm wavelengthand an electron density of Nd = 5.8 x 1020 cm-3. The Kerr nonlinearity was alsoobserved to be varied with the laser wavelength. By employing a femtosecondtime-resolved optical Kerr effect (OKE) technique, the relaxation time of OKEin the ITO films is determined to be ~1 ps. These findings suggest that theKerr nonlinearity in ITO can be tailored by controlling the carrierconcentration, which should be highly desirable in optoelectronic devices forultrafast all-optical switching.Comment: 15 pages, 1 table, 4 figure

Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films