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0   effect, the zero-bias barrier height was found to exhibit two different trends in the temperature ranges of 77–160 K and 160–300 K. The variation in the flat-band barrier height with temperature was found to be -(4.7±0.2)×104 eVK-1, approximately equal to that of the energy band gap. The value of the Richardson constant, A**, was found to be 0.27 A cm-2K-2 after considering the temperature dependence of the barrier height. The estimated value of this constant suggested the possibility of an interfacial oxide between the metal and the semiconductor. Investigations suggested the possibility of a thermionic field-emission-dominated current transport with a higher characteristic energy than that predicted by the theory. The observed variation in the zero-bias barrier height and the ideality factor could be explained in terms of barrier height inhomogenities in the Schottky diode.

Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures