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In this work thin films of the La1-xSrxCoO3 (0.05 < x < 0.26) compound weregrown, employing the so-called spray pyrolysis process. The as-grown thin filmsexhibit polycrystalline microstructure, with uniform grain size distribution,and observable porosity. Regarding their electrical transport properties, theproduced thin films show semiconducting-like behavior, regardless the Sr dopinglevel, which is most likely due to both the oxygen deficiencies and the grainynature of the films. Furthermore, room temperature current-voltage (I-V)measurements reveal stable resistance switching behavior, which is wellexplained in terms of space-charge limited conduction mechanism. The presentedexperimental results provide essential evidence regarding the engagement of lowcost, industrial-scale methods of growing perovskite transition metal oxidethin films, for potential applications in random access memory devices.

Spray-pyrolysis deposited La1-xSrxCoO3 thin films for potential non-volatile memory applications