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Heusler compounds exhibit a wide range of different electronic ground statesand are hence expected to be applicable as functional materials in novelelectronic and spintronic devices. Since the growth of large and defect-freeHeusler crystals is still challenging, single crystals of Fe2TiSn and Cu2MnAlwere grown by the optical floating zone technique. Two positron annihilationtechniques -Angular Correlation of Annihilation Radiation (ACAR) and DopplerBroadening Spectroscopy (DBS)- were applied in order to study both, theelectronic structure and lattice defects. Recently, we succeeded to observeclearly the anisotropy of the Fermi surface of Cu2MnAl, whereas the spectra ofFe2TiSn were disturbed by foreign phases. In order to estimate the defectconcentration in different samples of Heusler compounds the positron diffusionlength was determined by DBS using a monoenergetic positron beam.

Quality of Heusler Single Crystals Examined by Depth Dependent Positron Annihilation Techniques