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We theoretically study the characteristics of photoelectron emission inplasmonic nanoparticle arrays. Nanoparticles are partially embedded in asemiconductor, forming Schottky barriers at metal/semiconductor interfacesthrough which photoelectrons can tunnel from the nanoparticle into thesemiconductor; photodetection in the infrared range, where photon energies arebelow the semiconductor band gap (insufficient for band-to-band absorption insemiconductor), is therefore possible. The nanoparticles are arranged in asparse rectangular lattice so that the wavelength of the lattice-inducedRayleigh anomalies can overlap the wavelength of the localized surface plasmonresonance of the individual particles, bringing about collective effects fromthe nanoparticle array. Using full-wave numerical simulations, we analyze theeffects of lattice constant, embedding depth, and refractive index step betweenthe semiconductor layer and an adjacent transparent conductive oxide layer. Weshow that the presence of refractive index mismatch between media surroundingthe nanoparticles disrupts the formation of a narrow absorption peak associatedwith the Rayleigh anomaly, so the role of collective lattice effects in theformation of plasmonic resonance is diminished. We also show that 5 to 20-timesincrease of photoemission can be achieved on embedding of nanoparticles withouttaking into account dynamics of ballistic electrons. The results obtained canbe used to increase efficiency of plasmon-based photodetectors and photovoltaicdevices. The results may provide clues to designing an experiment where thecontributions of surface and volume photoelectric effects to the overallphotocurrent would be defined.

Electron Photoemission in Plasmonic Nanoparticle Arrays: Analysis of Collective Resonances and Embedding Effects