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The formation of laser-induced periodic surface structures (LIPSS, ripples)upon irradiation of silicon with multiple irradiation sequences consisting offemtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800nm) is studied numerically using a rate equation system along with atwo-temperature model accounting for one- and two-photon absorption andsubsequent carrier diffusion and Auger recombination processes. The temporaldelay between the individual equal-energy fs-laser pulses was varied between$0$ and $\sim 4$ ps for quantification of the transient carrier densities inthe conduction band of the laser-excited silicon. The results of the numericalanalysis reveal the importance of carrier generation and relaxation processesin fs-LIPSS formation on silicon and quantitatively explain the two timeconstants of the delay dependent decrease of the Low-Spatial-Frequency LIPSS(LSFL) area observed experimentally. The role of carrier generation, diffusionand recombination are quantified individually.

applied physics. a, materials science and processing

Rippled area formed by surface plasmon polaritons upon femtosecond laser  double-pulse irradiation of silicon: the role of carrier generation and  relaxation processes