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We perform time- and angle-resolved photoelectron spectroscopy on p-typeGaAs(110). We observe an optically excited population in the conduction band,from which the time scales of intraband relaxation and surface photovoltagedecay are both extracted. Moreover, the photovoltage shift of the valence bandintriguingly persists for hundreds of picoseconds at negative delays. Bycomparing to a recent theoretical study, we reveal that the negative-delaydynamics reflects the interaction of the photoelectrons with aphotovoltage-induced electric field outside the sample surface. We develop aconceptual framework to disentangle the intrinsic electron dynamics from thislong-range field effect, which sets the foundation for understandingtime-resolved photoemission experiments on a broad range of materials in whichpoor electronic screening leads to surface photovoltage. Finally, wedemonstrate how the long-lasting negative-delay dynamics in GaAs can beutilized to conveniently establish the temporal overlap of pump and probepulses in a time-resolved photoemission setup.

Electron propagation from a photo-excited surface: implications for time-resolved photoemission