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We present the room temperature (RT) near-infrared (NIR) photoluminescence(PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treatedby vapor of HF:HNO3 chemical mixture. This treatment activates or enhances thePL intensity at NIR region ranging from 1000 nm to 1800 nm. The PL consists ofa silicon band-edge emission and a broad composite band which was centered ataround 1400-1600 nm. The treatment modifies the wafer surface particularly atdefect sites particularly pits around NWs and NW surfaces by etching andoxidation of Si and Ge. This process can induce spatial confinement of carrierswhere band-to-band (BB) emission is the dominant property in Si capped strainedSi/Ge NW grown wafers. Strong signals were observed at sub-band gap energies inGe capped Si/Ge NW grown wafers. It was found that NIR PL is a competitiveproperty between the Si BB transition and deep-level emission which is mainlyattributable to Si related defects, Ge dots and strained Ge layers. Theenhancement in BB and deep-level PL was discussed in terms of strain, oxygenrelated defects, dots formation and carrier confinement effects. The resultsdemonstrate the effectiveness of this method in enhancing and tuning NIR PLproperties for possible applications.

Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment